Smartphones are not only personal data assistant, but also serve as personal entertainment center. According to comScore, adult smartphone users in America spend about 73.8 hours per month or nearly 2.5 hours a day. We all have experienced some issues in using our smartphones, such as fast battery drains and overheat issues. How to extend battery life and keep our phone cool are critical for new smartphones that expected to process massive 5G data transmission.
June 26, 2019 MagnaChip announced their new low-RDS(on) (Drain-Source on Resistance)/RSS(on) (Source-Source on Resistance) LV (low-Voltage) MOSFET (Metal-Oxide-Semiconductor-Field-Effect-Transistor) targeted mainly on LTE or 5G smartphones. The new MagnaChip low R(on) MOSFET can be added to the phone battery PCMs (Protection Circuit Module) or BMS (Battery Management System) to prevent over-voltage and over-current conditions from occurring during charging and discharging states to ultimately help extend the battery life and reduce heat.
According to MagnaChip’s specifications, the new MOSFET has a very low R(on) that is about 20% lower than previous versions with the same die size. The specs of the new products show the R(on) can be as low as 1.7 mohms for 30V N-Ch MOSFETs and 2.9 mohms for 30V P-Ch MOSFETs. The advantages of low R(on) include lower current loss and reduced heat dissipation. Use of low R(on) MOSFETs enables higher power density at the same level of heat dissipation, which means a faster charging rate can be allowed. MagnaChip has further reduced the chip size of the new MOSFET by about 10% offering design flexibility in PCB design. It is possible to realize WLCSP (Wafer Level Chip Scale Package) with the reduced chip size. The new low R(on) MOSFET has an added diode for ESD (Electrostatic Discharge) enhancement, which is to mitigate ESDs below 2kV to further protect the PCM and damages to other phone components.