Power Electronics Conference 2018

When: December 04, 2018
Where: Hilton Hotel at Munich Airport, Germany
Organizer: AspenCore Europe/ICC Media

Wide Bandgap Semiconductors offer excellent performance in high frequency and high temperature applications compared with current silicon components. The results of this trend are to get further size reduction in passive components like heat sink, capacitors and inductive coils. The challenge for the component characterizations in the domain of higher frequency and temperature is to have better measurement equipment and methods of analysis.

Technical presentations each with 20 minutes cover the following topics:

  • GaN ICs, SiC modules;
  • Simulation and Measurement;

In the afternoon, there’ll be two parallel sessions:

  • SiC – Discrete, Passive and Measurement;
  • GaN – Discrete, Passive and Measurement;

Program Details


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